Infineon Part Number | BSM35GP120 |
Vces | 1200V |
Transistor Configuration | Dual IGBT Module (Half Bridge) |
Ic(nom) @ 100 Deg C | 35 Amp |
Package Size | W:45mm L:107.5mm D:20.5mm (Presspack) |
V(isol) | 3.4 kV |
Vf @ 25 Deg C | 1.80 - 2.20V |
Tj(max) | 150°C |
Td(on) @ 25 Deg C | 0.28uS |
Td(off) @ 25 Deg C | 0.81uS |
I(ces) @ 25 Deg C | 3mA |
Rcc | 1.10mOhm |
Terminals | M6 Screw |
Hole Centres | 93 x 32mm(M6) |
Gate Terminals | Pin |
R th(j-c) | 0.10°C/W |
R th(c-h) | 0.08°C/W |
Weight | 180g |
Mounting Torque | 5 Nm (4 Nm Terminals) |
Factory Pack Qty | 10 |
Certification | UL Listed, ROHS |
Infineon Headquarters | Germany |
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