Infineon BSM100GB170DN2 IGBT Dual Module
Infineon Part Number | BSM100GB170DN2 |
Vces | 1700V |
Transistor Configuration | Dual IGBT Module (Half Bridge) |
Ic(nom) @ 80 Deg C | 100 Amp |
Package Size | W:61.4mm L:106.4mm D:30mm |
V(isol) | 4.0 kV |
Vf @ 25 Deg C | 2.3 - 2.8V |
Tj(max) | 150°C |
Td(on) @ 25 Deg C | 0.9uS |
Td(off) @ 25 Deg C | 1.2uS |
I(ces) @ 25 Deg C | 1mA |
Rcc | 0.65mOhm |
Terminals | M6 Screw |
Hole Centres | 93 x 48mm(M6) |
Gate Terminals | Spade (A 2.8 - 0.5mm) |
R th(j-c) | 0.26°C/W |
R th(c-h) | N/A |
Weight | 400g |
Mounting Torque | 4 Nm (4 Nm Terminals) |
Factory Pack Qty | 10 |
Certification | UL Listed, ROHS |
Infineon Headquarters | Germany |
, Obsolete. See for posible replacement part or for alternative
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